MRF7S21110HR3 MRF7S21110HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 6 0
-- 1 0
1 10010
-- 4 0
-- 5 0
-- 3 0
-- 2 0
7th Order
5th Order
3rd Order
400
VDD
=28Vdc,IDQ
= 1100 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO--TONE SPACING (MHz)
1 10010
VDD
=28Vdc,Pout
= 90 W (PEP), IDQ
= 1100 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--L
0
-- 2 0
-- 4 0
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 6 0
-- 3 0
IM3--U
IM5--U
IM5--L
IM7--L
IM7--U
-- 5 0
Figure 9. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
Actual
40
Ideal
0
-- 2
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
-- 3 d B = 7 5 W
20
40
60
30
60
45
35
η
D
,
DRAIN EFFICIENCY (%)
--1 dB = 31.27 W
--2 dB = 45.15 W
100
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
50
-- 7 0
0
36 4238
40
-- 3 0
-- 4 0
-- 5 0
-- 6 0
ACPR, UPPER AND LOWER RESULTS (dBc)
44 46
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected
with Memory Correction
48
300
12
19
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD
=28Vdc
IDQ
= 1100 mA
f = 2140 MHz
TC
=--30_C
25_C
85_C
50
-- 3 0_C
25_C
60
85_C
10
1
18
17
16
15
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
100
14
-- 2 0
-- 1 0
-- 7 0
-- 1 0
-- 4
80
50
55
13
VDD
=28Vdc,IDQ
= 1100 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
VDD
=28Vdc,IDQ
= 1100 mA, f = 2140 MHz, Single--Carrier
W--CDMA, Input Signal PAR = 7.5 dB, ACPR @
±5 MHz Offset in 3.84 MHz Integrated Bandwidth
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